Gate electrode effects on low-frequency (1/f) noise in p-MOSFETs with high-κ dielectrics

Solid-State Electronics

Volumn 50, Issue 6, 2006, Pages 992-998

  Srinivasan, P ^a,b   Simoen, E ^a   Singanamalla, R ^a,c   Yu, H Y ^a   Claeys, C ^a,c   Misra, D ^b  

^a IMEC   (Belgium)

^b NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

FUSI; Hafnium silicates; High dielectric; Low frequency noise; Metal gates; Poly Si gate; Trap profile

Indexed keywords

DEFECTS; DIELECTRIC MATERIALS; ELECTRIC CURRENTS; ELECTRODES;

FUSI; HAFNIUM SILICATES; LOW-FREQUENCY NOISE; METAL GATES; POLY-SI GATE; TRAP PROFILE;

MOSFET DEVICES;

EID: 33745750795     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.05.007     Document Type: Article

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