Low-frequency noise mechanisms in Si and pseudomorphic SiGe p -channel field-effect transistors

Applied Physics Letters

Volumn 85, Issue 24, 2004, Pages 6019-6021

  Prest, M J ^a   Bacon, A R ^a   Fulgoni, D J F ^a   Grasby, T J ^a   Parker, E H C ^a   Whall, T E ^a   Waite, A M ^b  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON TUNNELING; FERMI LEVEL; SILICA; WHITE NOISE;

CARRIER NUMBER FLUCTUATIONS (CNF); CORRELATED MOBILITY FLUCTUATIONS (CMF); EMPIRICAL PARAMETERS; EPITAXIAL THICKNESSES; POWER SPECTRAL DENSITY (PSD);

MOSFET DEVICES;

EID: 20444468098     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1836001     Document Type: Article

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