1/f noise in 0.18 μm technology n-MOSFETs from subthreshold to saturation

Solid-State Electronics

Volumn 46, Issue 7, 2002, Pages 977-983

  Akue Allogo, Y ^a   Marin, M ^a   De Murcia, M ^a   Llinares, P ^b   Cottin, D ^b  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; FERMI LEVEL; MATHEMATICAL MODELS; NATURAL FREQUENCIES; SEMICONDUCTING SILICON; SPURIOUS SIGNAL NOISE;

DRAIN CURRENTS;

MOSFET DEVICES;

EID: 0036642979     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00029-1     Document Type: Conference Paper

References (15)