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Microelectronics Reliability

Volumn 42, Issue 1, 2002, Pages 41-46

Static and low frequency noise characterization of surface- and buried-mode 0.1 μm P and N MOSFETs

(5) Fadlallah, M a,b Ghibaudo, G a Jomaah, J a Zoaeter, M b Guegan, G c

a Grenoble INP Phelma (France)

b LPM (Lebanon)

c CEA LETI (France)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); POLYSILICON; THRESHOLD VOLTAGE;

OXIDE TRAP DENSITY;

MOSFET DEVICES;

EID: 0036133489 PISSN: 00262714 EISSN: None Source Type: Journal
DOI: 10.1016/S0026-2714(01)00232-3 Document Type: Article

Times cited : (12)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.