1/F and RTS noise in submicron devices: Faster is noisier

AIP Conference Proceedings

Volumn 800, Issue , 2005, Pages 436-443

  Vandamme, L K J ^a   Macucci, M ^b  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b UNIVERSITY OF PISA   (Italy)

Author keywords

1 f noise; Corner frequency; Diode; Fluctuations; Low frequency noise; MOSFET; RTS noise; Unit current gain frequency

Indexed keywords

EID: 33750324680     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2138649     Document Type: Conference Paper

References (17)

1. F. N. Hooge, T. G. M. Kleinpenning, and L. K. J. Vandamme. Experimental studies on 1/f noise. Rep. Prog. Phys. 44 (5), pp. 479-532 (1981)
2. S. Machlup. Noise in Semiconductors: Spectrum of a Two-Parameter Random Signal. J. Appl. Phys. 25 (3), pp. 341-343, (1954).
3. L. K. J. Vandamme, D. Sodini, and Z. Gingl. On the anomalous behaviour of the relative amplitude of RTS noise. Solid-State Electronics 42 (6), pp. 901-905, (1998)
4. M. Macucci, B. Pellegrini, G. Penneli and M.Piotto. Microelectronic Eng 61-62, pp.701-705 (2002).
5. L. K. J. Vandamme and S. Oosterhoff. Annealing of ion-implanted resistors reduces the 1/f noise. J. Appl. Phys. 59 (9), pp. 3169-3174, (1986).
6. R. H. M. Clevers. Volume and temperature dependence of the 1/f noise parameter a in Si. Physica B 54, pp. 214-224, (1989).
7. L.K.J. Vandamme et al. IEEE Trans on Elec. Dev. 41 (11), pp. 1936-1945, (1994).
8. E. P. Vandamme and L. K. J. Vandamme. Critical discussion on unified 1/f noise models for MOSFETs. IEEE Trans, on Elec. Dev. 47 (11), pp. 2146-2152, (2000).
9. 3 gate dielectrics. Solid-State Electronics 48, pp. 2271-2275 (2004).
10. A.V. Belyakov, L.K.J. Vandamme et al. Fluctuation and Noise Letters (FNL) 3 (3): L325-L339, (2003).
11. M. Toita, L. K. J. Vandamme, S. Sugawa, A. Teramoto, and T Ohmi. Geometry and Bias Dependency of LowFrequency Random Telegraph Signal and 1/f Noise Amplitude in MOSFETs. FNL 2005 (submitted).
12. L. K. J. Vandamme. 1/f Noise in MOSTs: Faster is Noisier; Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices (pp 109-120) Eds. J.Sikula and M. Levinshtein ( ARW, Brno, NATO), Kluwer, ISBN 1-4020-2169-0, (2004).
13. +p diodes. Solid-State Electronics 41 (6), pp. 901-908, (1997).
14. L. K. J. Vandamme, A. V. Belyakov, M. Y. Perov, and A. V. Yakimov. Difference in dependence of 1/f and RTS noise on current in quantum dots light emitting diodes. In: NOISE IN DEVICES AND CIRCUITS, edited by M. J. Deen, Z. CelikButler, and M. E. Levinshtein, Proc. of SPIE Vol. 5113, pp. 368-378, (2003).
15. S. Bychikhin, D. Pogany, L. K. J. Vandamme, G. Meneghesso and E. Zanoni. Low frequency noise sources in as-prepared and aged GaN-based light emitting diodes. J. Appl. Phys. 97, pp. 123714-1 to 123714-7, (2005).
16. L. K. J. Vandamme and F. N. Hooge. On the additivity of generation recombination spectra Part 3: The McWhorter model for 1/f noise in MOSFETs. Physica B, Vol 357, pp 507-524 (2005).
17. M.J. Kirton and M.J. Uren. Noise in solid-state microstructures: a new perspective on individual defects, interface states and low-frequency(l/f) noise. Advances in Phys. Vol 38, pp 367-468 (1989).