Design rules for field plate edge termination in SiC Schottky diodes

IEEE Transactions on Electron Devices

Volumn 48, Issue 12, 2001, Pages 2659-2664

  Tarplee, Marc C ^a,b,c   Madangarli, Vipin P ^a,b,d   Zhang, Quinchun ^b   Sudarshan, Tangali S ^a,b  

^a IEEE   (United States)

^b University of South Carolina   (United States)

^c York Technical College   (United States)

^d TestChip Technologies Inc   (United States)

Author keywords

Avalanche breakdown; Edge termination; Field plate; Schottky diode

Indexed keywords

AVALANCHE BREAKDOWN; EDGE TERMINATION;

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

SCHOTTKY BARRIER DIODES;

EID: 0035696702     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.974686     Document Type: Article

References (12)

1. The response of high voltage 4H-SiC p-n junction diodes to different edge termination techniques
2. Medici simulation of 6H-SiC oxide ramp profile Schottky structure
3. High voltage Ni-and Pt-SiC Schottky diodes using metal field plate edge termination
4. 2000 V 6H-SiC PN junction diodes grown by chemical vapor deposition
5. Study of different edge termination used for 6H-SiC power diodes
6. Silicon carbide high-power devices
7. A simple edge termination for silicon carbide devices with nearly ideal breakdown voltage
8. Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers
9. SiC edge termination using finite area argon Ion implantation
10. High voltage Schottky barrier diodes on p-type SiC using metal-overlap on a thick oxide layer as edge termination