Carrier transport through boron-doped amorphous diamond-like carbon p layer of amorphous silicon based p-i-n solar cells

Applied Physics Letters

Volumn 75, Issue 4, 1999, Pages 569-571

  Lee, Chang Hyun ^a   Lim, Koeng Su ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CARBON; CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; EXTRAPOLATION; FERMI LEVEL; HYDROGENATION; PHOTOCURRENTS; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; THERMIONIC EMISSION; TRANSPORT PROPERTIES;

BORON-DOPED AMORPHOUS DIAMOND-LIKE CARBON; HOPPING CONDUCTIONS; MULTISTEP-TUNNELING CONDUCTIONS; SCHOTTKY BARRIER MODELS;

SILICON SOLAR CELLS;

EID: 0032606414     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124444     Document Type: Article

References (8)

1. C. H. Lee and K. S. Lim, Appl. Phys. Lett. 72, 106 (1998).
2. D. Dasgupta, F. Demichelis, and A. Tagliaferro, Philos. Mag. B 63, 1255 (1991).
3. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
4. N. F. Mott and E. A. Davis, Electronic Processes in Non-Crystalline Materials (Oxford University Press, London, 1979).
5. R. M. Eisberg, Fundamentals of Modern Physics (Wiley, New York, 1961).
6. H. Matsuura, A. Matsuda, H. Okushi, and K. Tanaka, J. Appl. Phys. 58, 1578 (1985).
7. H. Sakai, T. Yoshida, S. Fujikake, T. Hama, and Y. Ichikawa, J. Appl. Phys. 67, 3494 (1990).
8. J. Kanicki, Amorphous and Macrocrystalline Semiconductor Devices (Artech House, London, 1992), Vol. 2.