Stoichiometric and structural alterations in GaN thin films during annealling

Applied Physics A: Materials Science and Processing

Volumn 77, Issue 1, 2003, Pages 103-108

  Rana, M A ^a   Osipowicz, T ^a   Choi, H W ^a   Breese, M B H ^a   Watt, F ^a   Chua, S J ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DECOMPOSITION; ELECTRONIC STRUCTURE; GALLIUM NITRIDE; HELIUM; IONS; PROTONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STOICHIOMETRY;

RUTHERFORD BACKSCATTERING SPECTROMETRY; STRUCTURAL ALTERATIONS;

THIN FILMS;

EID: 0038271658     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-003-2102-z     Document Type: Article

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