Effect of thermal stability of GaN epi-layer on the Schottky diodes

Solid-State Electronics

Volumn 44, Issue 7, 2000, Pages 1203-1208

  Lee, K N ^a   Cao, X A ^a   Abernathy, C R ^a   Pearton, S J ^a   Zhang, A P ^b   Ren, F ^b   Hickman, R ^c   Van Hove, J M ^c  

^a UNIVERSITY OF FLORIDA   (United States)

^b University of Florida   (United States)

^c Blue Lotus Micro Devices   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; PYROLYSIS; RAPID THERMAL ANNEALING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

GALLIUM NITRIDE; THERMAL DAMAGE;

SCHOTTKY BARRIER DIODES;

EID: 0033749046     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00041-1     Document Type: Article

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