The interface state energy distribution from capacitance-frequency characteristics of gold/n-type Gallium arsenide Schottky barrier diodes exposed to air

Thin Solid Films

Volumn 425, Issue 1-2, 2003, Pages 210-215

  Ozdemir A F ^a   Turut A ^b   Kokce A ^a  

^a SULEYMAN DEMIREL UNIVERSITY   (Turkey)

^b ATATÜRK UNIVERSITY   (Turkey)

Author keywords

Gallium arsenide; Interfaces; Metal oxide semiconductor structure; Metallization; Schottky barrier

Indexed keywords

CAPACITANCE; ELECTRIC FREQUENCY MEASUREMENT; ENERGY GAP; EVAPORATION; GOLD; INTERFACES (MATERIALS); MIS DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPIC ANALYSIS;

STATE ENERGY DISTRIBUTION;

SCHOTTKY BARRIER DIODES;

EID: 0037415770     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01140-9     Document Type: Article

References (35)

1. Balderas-Navarro R.E., Hingerl K., Hilber W., Stifter D., Bonanni A., Sitter H. J. Vac. Sci. Technol. B. 18:2000;2224.
2. Rhoderick H., Williams R.H. Metal-Semiconductor Contacts. 1988;73-99 Clerendon, Oxford.
3. Maffeis T.G.G., Simmonds M.C., Clark S.A., Peiro F., Haines P., Parbrook P.J. J. Phys. D: Appl. Phys. 33:2000;L115.
4. Brillson J. Sur. Sci. Rep. 2:1982;123.
5. Tung R.T. Mat. Sci. Eng. R. 35:2001;1-138.
6. Gümüs A., Türüt A., Yalçin N. J. Appl. Phys. 91:(1):2002;245.
7. Vanalme G.M., Van Meirhaeghe R.L., Cordon F., Van Daele P. Semicond. Sci. Technol. 12:1997;907.
8. Türüt A., Yalçin N., Saglam M. Solid-State Electron. 35:1992;835.
9. Biber M., Cakar M., Turut A. J. Mater. Sci.-Mater. Elect. 12:2001;575.
10. Turner M.J., Rhoderick E.H. Solid-State Electron. 11:1968;291.
11. Vanalme G.M., Goubert L., Van Meirhaeghe R.L., Cardon F., van Daele P. Semicon. Sci. Technol. 14:1999;871.
12. Temirci C., Bati B., Saglam M., Türüt A. Appl. Surf. Sci. 172:2001;1.
13. Morita M., Ohmi T., Hasegawa E., Kawakami M., Ohwada M. J. Appl. Phys. 68:1990;1272.
14. Bolotnikov A.E., Boggs S.E., Chen C.M.H., Cook W.R., Harrison F.A., Schindler S.M. Nucl. Instrum. Meth. A. 482:2002;395.
15. Singh A. Solid-State Electron. 28:1985;223.
16. Cova P., Singh A., Medina A., Masut R.A. Solid-State Electron. 42:1998;477.
17. Sullivan J.P., Tung R.T., Pinto M.R., Graham W.R. J. Appl. Phys. 70:1991;7403.
18. Werner J.H., Güttler H.H. J. Appl. Phys. 69:1991;1522.
19. Nicollian E.H., Goetzberger A. Bell Sys. Tech. 46:1967;1055.
20. Bati B., Nuhoglu Ç., Saglam M., Ayyildiz E., Türüt A. Physica Scripta. 61:2000;209.
21. Ayyildiz E., Nuhoglu Ç., Turut A. J. Electron. Mater. 31:2002;119.
22. Chekir F., Barret C., Vapaille A. J. Appl. Phys. 54:1983;6474.
23. Berberrich S., Godignon P., Locatelli M.L., Millan J., Hartnagel H.L. Solid-State Electron. 42:1998;915.
24. Pandey S., Kal S. Solid-State Electron. 42:1998;943.
25. Tseng H., Wu C. Solid-State Electron. 30:1987;383.
26. Zamora M., Reeves G.K., Gazecki G., Mi J., Yang C.Y. Solid-State Electron. 43:1999;801.
27. Chattopadhyay P., RayChaudhuri B. Solid-State Electron. 36:1993;605.
28. Çakar M., Onganer Y., Türüt A. Synth. Met. 126:2002;213.
29. Nguyen N.D., Germain M., Schmeits M., Schineller B., Heuken M. J. Appl. Phys. 90:2001;985.
30. Werner J.H., Ploog K., Queisser H.J. Phys. Rev. Lett. 57:1986;1080.
31. Tripathi D., Srivastava P.C., Chandra S. Solid-State Electron. 35:1992;1185.
32. Ahaitouf A., Bath A. Thin solid Films. 342:1999;136.
33. Horváth Zs.J. Appl. Phys. Lett. 54:1989;931.
34. Horváth Zs.J. J. Appl. Phys. 63:1988;976.
35. Passlack M., Hong M., Mannaerts J.P. Solid-State Electron. 39:1996;1133.