Interfacial reaction and Fermi level movement induced by sequentially deposited metals on GaN: Au/Ni/GaN

Physical Review B - Condensed Matter and Materials Physics

Volumn 61, Issue 16, 2000, Pages 10966-10971

  Kim, Min Ho ^a   Lee, Sung Nam ^a   Huh, Chul ^a   Park, Serng Yerl ^b   Han, Jeong Yeul ^b   Seo, Jae Myung ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005850444     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.61.10966     Document Type: Article

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