Effects of rapid thermal annealing on the interface and oxide trap distributions in hafnium oxide films

2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003

Volumn , Issue , 2003, Pages 431-434

  Zhan, Nian ^a,b   Ng, K L ^a,b   Wong, Hei ^c   Poon, M C ^a,b   Kok, C W ^a,b  

^a IEEE   (United States)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^c CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Dielectric film; Hafnium oxide; High ; MOS devices; Oxide trap; Reliability

Indexed keywords

ANNEALING; CHARGE DENSITY; DIELECTRIC FILMS; ELECTRON DEVICES; GRAIN BOUNDARIES; HAFNIUM; HAFNIUM OXIDES; INTERFACE STATES; INTERFACES (MATERIALS); MOS DEVICES; OXIDES; RAPID THERMAL ANNEALING; RELIABILITY; SOLID STATE DEVICES;

GRAIN BOUNDARY INTERFACE; INTERFACE CHARGE; INTERFACE TRAP DENSITY; OXIDE CHARGE; OXIDE CHARGE DENSITY; OXIDE TRAPS; POST DEPOSITION ANNEALING;

OXIDE FILMS;

EID: 84946409498     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EDSSC.2003.1283566     Document Type: Conference Paper

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