Work function tuning via interface dipole by ultrathin reaction layers using AlTa and AlTaN alloys

IEEE Electron Device Letters

Volumn 27, Issue 9, 2006, Pages 731-733

  Chen, Bei ^a   Jha, Rashmi ^a   Misra, Veena ^a  

^a North Carolina State University   (United States)

Author keywords

AlTa; AlTaN; Dipole; Effective work function; Metal gate

Indexed keywords

ALUMINUM ALLOYS; DIELECTRIC DEVICES; ELECTRODES; GATES (TRANSISTOR);

DIELECTRIC LAYER; EFFECTIVE WORK FUNCTION; INTERFACE DIPOLE; METAL GATE;

TUNING;

EID: 33748505222     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.880643     Document Type: Article

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