Three-layer laminated metal gate electrodes with tunable work functions for CMOS applications

IEEE Electron Device Letters

Volumn 26, Issue 4, 2005, Pages 231-233

  Bai, W P ^a   Bae, S H ^a   Wen, H C ^a   Mathew, S ^b   Bera, L K ^b   Balasubramanian, N ^b   Yamada, N ^c   Li, M F ^d   Kwong, D L ^a  

^a The University of Texas at Austin   (United States)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c Canon ANELVA Technix Corporation   (Japan)

^d NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

CMOS; Laminated metal gate; Metal gate; Metal nitride; Work function

Indexed keywords

CRYSTALLIZATION; ELECTRODES; GATES (TRANSISTOR); GRAIN BOUNDARIES; MOS CAPACITORS; MOSFET DEVICES; NITRIDES; RAPID THERMAL ANNEALING; THERMODYNAMIC STABILITY;

LAMINATED METAL GATE; METAL GATE; METAL NITRIDES; WORK FUNCTION;

CMOS INTEGRATED CIRCUITS;

EID: 17644370345     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.844701     Document Type: Article

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