A systematic study of the influence of nitrogen in tuning the effective work function of nitrided metal gates

2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers

Volumn , Issue , 2005, Pages 105-106

  Majhi, P ^b   Wen, H C ^a   Choi, K ^a   Alshareef, H ^c   Huffman, C ^c   Lee, B H ^d  

^a SEMATECH   (United States)

^b PHILIPS RESEARCH LABORATORIES   (Germany)

^c TEXAS INSTRUMENTS   (United States)

^d IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PLASMA DEPOSITION; WORK FUNCTIONS;

DIELECTRIC MATERIALS; MODULATION; NITROGEN; PLASMAS;

TUNING;

EID: 27144472431     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2005.1497097     Document Type: Conference Paper

References (5)

1. H. Zhong, et al., IEDM 01, p. 467 (2001)
2. S. B. Samavedam, et al., IEDM 03, p.307 (2003)
3. J. H. Sim, et al., IEEE EDL, 25, p.610 (2004)
4. D.-G. Park, et al., 2004 VLSI Tech. Symp., 18-2 (2004)
5. H. Alshareef, et al., 2004 ALD conference (2004)