A new analytical method of solving 2D poisson's equation in MOS devices applied to threshold voltage and subthreshold modeling

Solid-State Electronics

Volumn 39, Issue 12, 1996, Pages 1761-1775

  Klos A ^a   Kostka, A ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CONFORMAL MAPPING; MOSFET DEVICES; PARTIAL DIFFERENTIAL EQUATIONS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SOLID STATE PHYSICS;

THRESHOLD VOLTAGE; TWO DIMENSIONAL POISSON EQUATION;

MOS DEVICES;

EID: 0030396983     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(96)00122-0     Document Type: Article

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