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Volumn 3994 LNCS - IV, Issue , 2006, Pages 607-614

Self-consistent 2D compact model for nanoscale double gate MOSFETs

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CONFORMAL MAPPING; ELECTRIC CURRENTS; ELECTROSTATICS; GATES (TRANSISTOR); NANOSTRUCTURED MATERIALS; TWO DIMENSIONAL;

EID: 33746592891     PISSN: 03029743     EISSN: 16113349     Source Type: Book Series    
DOI: 10.1007/11758549_83     Document Type: Conference Paper
Times cited : (19)

References (12)
  • 1
    • 0025486394 scopus 로고
    • Two-dimensional analytic modeling of very thin SOI MOSFETs
    • Woo, J. S., Terrill, K.W., Vasudev, P. K.: Two-dimensional analytic modeling of very thin SOI MOSFETs. IEEE Trans. Electron Devices, vol. 37 (1990) 1999-2005
    • (1990) IEEE Trans. Electron Devices , vol.37 , pp. 1999-2005
    • Woo, J.S.1    Terrill, K.W.2    Vasudev, P.K.3
  • 2
    • 0032187666 scopus 로고    scopus 로고
    • Generalized scale length for two-dimensional effects in MOSFETs
    • Frank, D. J., Taur, Y., Wong, H.-S. P.: Generalized scale length for two-dimensional effects in MOSFETs. IEEE Electron Device Letters, vol. 19 (1998) 385-387
    • (1998) IEEE Electron Device Letters , vol.19 , pp. 385-387
    • Frank, D.J.1    Taur, Y.2    Wong, H.-S.P.3
  • 3
    • 0034258881 scopus 로고    scopus 로고
    • Analytic description of short-channel effects in fully-depleted double gate and cylindrical, surrounding-gate MOSFETs
    • Oh, S.-H., Monroe, D., Hergenrother, J. M.: Analytic Description of Short-Channel Effects in Fully-depleted Double Gate and Cylindrical, Surrounding-Gate MOSFETs. IEEE Electron Device Letters, vol. 21. no. 9 (2000) 1173-1178
    • (2000) IEEE Electron Device Letters , vol.21 , Issue.9 , pp. 1173-1178
    • Oh, S.-H.1    Monroe, D.2    Hergenrother, J.M.3
  • 4
    • 4444270647 scopus 로고    scopus 로고
    • A 2-D analytical solution for SCEs in the 2D MOSFET
    • Liang, X., Taur, Y.: A 2-D analytical solution for SCEs in the 2D MOSFET. IEEE Trans. Electron Devices, vol. 51. no. 8 (2004) 1385-1391
    • (2004) IEEE Trans. Electron Devices , vol.51 , Issue.8 , pp. 1385-1391
    • Liang, X.1    Taur, Y.2
  • 6
    • 33746658853 scopus 로고
    • Electromagnetic fields
    • Wiley, New York
    • Weber, E.: Electromagnetic fields, vol. 1 - Mapping of Fields. Wiley, New York (1950)
    • (1950) Mapping of Fields , vol.1
    • Weber, E.1
  • 7
    • 0030396983 scopus 로고    scopus 로고
    • A new analytical method of solving 2D Poisson's equation in MOS devices applied to threshold voltage and subthreshold modeling
    • Klös, A., Kostka, A.: A new analytical method of solving 2D Poisson's equation in MOS devices applied to threshold voltage and subthreshold modeling. Solid-State Electronics, vol. 39 (1996) 1761-1775
    • (1996) Solid-state Electronics , vol.39 , pp. 1761-1775
    • Klös, A.1    Kostka, A.2
  • 8
    • 33746636632 scopus 로고    scopus 로고
    • Closed-form 2D modeling of sub-100nm MOSFETs in the subthreshold regime
    • Østhaug, J., Fjeldly, T. A., Iniguez, B.: Closed-form 2D modeling of sub-100nm MOSFETs in the subthreshold regime. J. Telecom, and Information Techn. vol. 1/2004, (2004) 70-79
    • (2004) J. Telecom, and Information Techn. , vol.1 , Issue.2004 , pp. 70-79
    • Østhaug, J.1    Fjeldly, T.A.2    Iniguez, B.3
  • 9
    • 84941162631 scopus 로고    scopus 로고
    • 2D modeling of nanoscale DO SOI MOSFETs in the subthreshold regime
    • accepted for publication
    • Kolberg, S., Fjeldly, T. A.: 2D modeling of nanoscale DO SOI MOSFETs in the subthreshold regime, accepted for publication in Journal of Computational Electronics
    • Journal of Computational Electronics
    • Kolberg, S.1    Fjeldly, T.A.2
  • 10
    • 84941165156 scopus 로고    scopus 로고
    • 2D Modeling of nanoscale double gate SOI MOSFETs using conformal mapping. Physica scripta
    • accepted for publication
    • Kolberg, S., Fjeldly, T. A.: 2D Modeling of Nanoscale Double Gate SOI MOSFETs Using Conformal Mapping. Physica Scripta, accepted for publication in Physica Scripta
    • Physica Scripta
    • Kolberg, S.1    Fjeldly, T.A.2
  • 12
    • 0027239315 scopus 로고
    • Threshold voltage modeling and the subthreshold regime of operation of short-channel MOSFETs
    • Fjeldly, T. A., Shur, M. S.: Threshold Voltage Modeling and the Subthreshold Regime of Operation of Short-Channel MOSFETs. IEEE Trans. Electron Devices, vol. 40, (1993) 137-145
    • (1993) IEEE Trans. Electron Devices , vol.40 , pp. 137-145
    • Fjeldly, T.A.1    Shur, M.S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.