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Two-dimensional analytic modeling of very thin SOI MOSFETs
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Woo, J.S.1
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Generalized scale length for two-dimensional effects in MOSFETs
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0034258881
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Analytic description of short-channel effects in fully-depleted double gate and cylindrical, surrounding-gate MOSFETs
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Oh, S.-H., Monroe, D., Hergenrother, J. M.: Analytic Description of Short-Channel Effects in Fully-depleted Double Gate and Cylindrical, Surrounding-Gate MOSFETs. IEEE Electron Device Letters, vol. 21. no. 9 (2000) 1173-1178
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Oh, S.-H.1
Monroe, D.2
Hergenrother, J.M.3
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4444270647
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A 2-D analytical solution for SCEs in the 2D MOSFET
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Liang, X.1
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Compact model for multiple gate MOSFETs
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Iñíguez, B.1
Hamid, H.A.2
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Electromagnetic fields
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A new analytical method of solving 2D Poisson's equation in MOS devices applied to threshold voltage and subthreshold modeling
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Closed-form 2D modeling of sub-100nm MOSFETs in the subthreshold regime
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2D modeling of nanoscale DO SOI MOSFETs in the subthreshold regime
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Kolberg, S., Fjeldly, T. A.: 2D modeling of nanoscale DO SOI MOSFETs in the subthreshold regime, accepted for publication in Journal of Computational Electronics
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2D Modeling of nanoscale double gate SOI MOSFETs using conformal mapping. Physica scripta
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accepted for publication
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Kolberg, S., Fjeldly, T. A.: 2D Modeling of Nanoscale Double Gate SOI MOSFETs Using Conformal Mapping. Physica Scripta, accepted for publication in Physica Scripta
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Kolberg, S.1
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Threshold voltage modeling and the subthreshold regime of operation of short-channel MOSFETs
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Fjeldly, T.A.1
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