Precise 2D compact modeling of nanoscale DG MOSFETs based on conformal mapping tectoniques

2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings

Volumn 3, Issue , 2006, Pages 668-673

  Fjeldly, T A ^a   Kolberg, S ^a   Iniguez B ^b  

^a UNIVERSITY OF OSLO   (Norway)

^b UNIVERSITAT ROVIRA I VIRGILI   (Spain)

Author keywords

2D modeling; Conformal mapping; Double gate; MOSFET; Nanoscale

Indexed keywords

COMPUTER SIMULATION; CONFORMAL MAPPING; LAPLACE TRANSFORMS; MATHEMATICAL MODELS; MOSFET DEVICES; POISSON EQUATION;

DOUBLE GATE (DG); DRAIN CURRENT; ELECTRONIC CHARGE; SPATIAL INVERSION CHARGE;

GATES (TRANSISTOR);

EID: 33845216183     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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