Quantum mechanical influences on short-channel effects in ultra-thin MOSFET/SIMOX devices

IEEE Electron Device Letters

Volumn 17, Issue 6, 1996, Pages 300-302

  Omura, Yasuhisa ^a,b   Izumi, Katsutoshi ^a,b  

^a NTT CORPORATION   (Japan)

^b IEEE

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; FERMI LEVEL; MATHEMATICAL MODELS; MATHEMATICAL TECHNIQUES; PERMITTIVITY; QUANTUM THEORY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM WIRES; SILICON ON INSULATOR TECHNOLOGY;

BOLTZMANN CONSTANT; DEBYE LENGTH; DRAIN VOLTAGE; QUANTUM MECHANICAL EFFECT; SHORT CHANNEL EFFECTS; THRESHOLD VOLTAGE; TWO DIMENSIONAL SUBBAND STRUCTURE;

MOSFET DEVICES;

EID: 0030173467     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.496464     Document Type: Article

References (13)

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13. _, to be submitted.