Modeling, verification and comparison of short-channel double gate and gate-all-around MOSFETs

Mathematics and Computers in Simulation

Volumn 79, Issue 4, 2008, Pages 1107-1115

  Kolberg, S ^a   Borli H ^a   Fjeldly, T A ^a  

^a UNIVERSITY OF OSLO   (Norway)

Author keywords

2D modeling; Conformal mapping; Double gate; Gate all around; MOSFET

Indexed keywords

CONFORMAL MAPPING; ELECTROSTATICS; GALERKIN METHODS; GALLIUM ALLOYS;

2D MODELING; AND GATES; CAPACITIVE COUPLINGS; CHANNEL BEHAVIORS; DOUBLE GATE; DOUBLE GATES; ELECTROSTATIC PROPERTIES; GATE-ALL-AROUND; INVERSION CHARGES; MAPPING TECHNIQUES; MOS FETS; MOSFET; NUMERICAL DEVICE SIMULATIONS; SUBTHRESHOLD REGIMES;

MOSFET DEVICES;

EID: 56849088193     PISSN: 03784754     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matcom.2007.09.011     Document Type: Article

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