High-mobility microcrystalline silicon thin-film transistors prepared near the transition to amorphous growth

Journal of Applied Physics

Volumn 104, Issue 5, 2008, Pages

  Chan, Kah Yoong ^a,b   Knipp, Dietmar ^a   Gordijn, Aad ^b   Stiebig, Helmut ^b  

^a JACOBS UNIVERSITY BREMEN   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHARGE CARRIERS; CHEMICAL PROPERTIES; CIVIL AVIATION; CRYSTAL GROWTH; FILM GROWTH; FILM PREPARATION; GRAIN BOUNDARIES; GRAIN GROWTH; MICROCRYSTALLINE SILICON; NONMETALS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

AMORPHOUS GROWTH; AMORPHOUS PHASE; CHANNEL MATERIALS; CHARGE TRANSPORTING; CHARGE-CARRIER MOBILITIES; CORE ELEMENTS; CRYSTALLINE VOLUME FRACTION; ELECTRONIC APPLICATIONS; ELECTRONIC DEFECTS; FLEXIBLE SUBSTRATES; HIGH-MOBILITY; LOW TEMPERATURES; MAXIMUM TEMPERATURE; PLASTIC FOILS; RADIO-FREQUENCY-IDENTIFICATION TAGS; SILICON CHANNELS; SILICON CRYSTALLITES; SILICON THIN FILMS; STRUCTURAL PROPERTIES; SUBTHRESHOLD SLOPES; TRANSISTOR PARAMETERS;

CARRIER MOBILITY;

EID: 51849117218     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2973465     Document Type: Article

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