High electron mobility (∼150 cm2/Vs) PECVD nanocrystalline silicon top-gate TFTs at 260 °C

Materials Research Society Symposium Proceedings

Volumn 862, Issue , 2005, Pages 641-646

  Lee, Czang Ho ^a   Sazonov, Andrei ^a   Nathan, Arokia ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; NANOSTRUCTURED MATERIALS; OPTIMIZATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; THIN FILM TRANSISTORS; VOLUME FRACTION;

FIELD EFFECT MOBILITY; GATE DIELECTRICS; NANOCRYSTALLINE SILICON; OXYGEN CONCENTRATION;

SILICON;

EID: 30544442257     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-862-a17.5     Document Type: Conference Paper

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