Improved microcrystalline silicon TFTs

Journal of Non-Crystalline Solids

Volumn 352, Issue 9-20 SPEC. ISS., 2006, Pages 1728-1731

  Kandoussi, K ^a   Gaillard, A ^a   Simon, C ^a   Coulon, N ^a   Pier, T ^a   Mohammed Brahim, T ^a  

^a UNIVERSITÉ DE RENNES 1   (France)

Author keywords

Chemical vapor deposition; Processing; Thin film transistors

Indexed keywords

CRYSTALLINE MATERIALS; INTERFACES (MATERIALS); SEMICONDUCTOR DOPING; SILICON; THIN FILM TRANSISTORS; VOLUME FRACTION;

CRYSTALLINE FRACTION; DOPING GAS VALVE; ELECTRON FIELD EFFECT MOBILITY;

ELECTRON MOBILITY;

EID: 33745447402     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2005.09.056     Document Type: Article

References (3)

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3. Schropp R.E.I., Stannowski B., and Rath J.K. J. Non-Cryst. Solids 299-302 (2002) 1304