Control of the initial stage of nanocrystallite silicon growth monitored by in-situ spectroscopic ellipsometry

Applied Surface Science

Volumn 113-114, Issue , 1997, Pages 111-115

  Shirai, Hajime ^a   Arai, Takeshi ^a   Nakamura, Takuya ^a  

^a SAITAMA UNIVERSITY   (Japan)

Author keywords

AFM; In situ ellipsometry; nc Si; SiH 4 gas heating; TFT

Indexed keywords

AMORPHOUS FILMS; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; ELLIPSOMETRY; GAS HEATING; NANOSTRUCTURED MATERIALS; PLASMA APPLICATIONS; SEMICONDUCTING SILICON; SILICA; SUBSTRATES; SURFACE ROUGHNESS; THIN FILM TRANSISTORS;

IN SITU SPECTROSCOPIC ELLIPSOMETRY; NANOCRYSTALLINE SILICON;

CRYSTAL GROWTH;

EID: 0031547191     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00801-X     Document Type: Article

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