Layer morphology and Al implant profiles after annealing of supersaturated, single-crystalline, amorphous, and nanocrystalline SiC

Journal of Applied Physics

Volumn 96, Issue 5, 2004, Pages 2841-2852

  Heera, V ^a   Mucklich A ^a   Dubois, C ^b   Voelskow, M ^a   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; AMORPHIZATION; AMORPHOUS MATERIALS; ANNEALING; ATOMIC FORCE MICROSCOPY; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; MORPHOLOGY; NANOSTRUCTURED MATERIALS; PRECIPITATION (CHEMICAL); RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SINGLE CRYSTALS; SOLUBILITY; SUPERSATURATION; TRANSMISSION ELECTRON MICROSCOPY;

CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY (XTEM); DOPANTS; ION CHANNELING; SOLID SOLUBILITY;

SILICON CARBIDE;

EID: 5044222779     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1769600     Document Type: Article

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