Transient enhanced diffusion of aluminum in SiC during high temperature ion implantation

Journal of Applied Physics

Volumn 86, Issue 11, 1999, Pages 6039-6042

  Usov, I O ^a,c   Suvorova, A A ^a   Sokolov, V V ^a   Kudryavtsev, Y A ^a   Suvorov, A V ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b Research Triangle Park   (United States)

^c UNIVERSITY OF NORTH CAROLINA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000523730     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371651     Document Type: Article

References (11)

1. E. N. Mokhov, Yu. A. Vodakov, and G. A. Lomakina, Sov. Phys. Solid State 11, 415 (1969).
2. Y. Tajima, K. Kijima, and W. D. Kingery, J. Chem. Phys. 77, 2592 (1982).
3. A. V. Suvorov, I. O. Usov, V. V. Sokolov, and A. A. Suvorova, Mater. Res. Soc. Symp. Proc. 396, 239 (1996).
4. I. O. Usov, A. A. Suvorova, V. V. Sokolov, Y. A. Kudryavtsev, and A. V. Suvorov, Mater. Res. Soc. Symp. Proc. 504, 141 (1998).
5. S. Namba, K. Masuda, K. Gamo, A. Doi, S. Ishihara, and I. Kimura, Radiat. Eff. 6, 115 (1970).
6. M. Miyake and S. Aoyama, J. Appl. Phys. 63, 1754 (1988).
7. R. Schork, P. Pichler, A. Kluge, and H. Ryssel, Nucl. Instrum. Methods Phys. Res, B 59/60, 499 (1991).
8. A. A. Suvorova, I. O. Usov, O. I. Lebedev, G. Van Tendeloo, and A. V. Suvorov, Mater. Res. Soc. Symp. Proc. 512, 481 (1998).
9. O. I. Lebedev, G. Van Tendeloo, A. A. Suvorova, I. O. Usov, and A. V. Suvorov, J. Electron. Microsc. 46, 271 (1997).
10. F. C. Frank and D. Turnbull, Phys. Rev. 103, 617 (1956).
11. A. O. Konstantinov, Sov. Phys. Semicond. 26, 151 (1992).