Amorphization and solid phase epitaxy of high-energy ion implanted 6H-SiC

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 195-197

  Ishimaru, Manabu ^a   Harada, Shinsuke ^a   Motooka, Teruaki ^a   Nakata, Toshitake ^b   Yoneda, Tomoaki ^b   Inoue, Morio ^b  

^a KYUSHU UNIVERSITY   (Japan)

^b Ion Eng Res Institute Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; AMORPHOUS MATERIALS; ANNEALING; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; CRYSTALLIZATION; EPITAXIAL GROWTH; ION IMPLANTATION; RADIATION EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

SOLID PHASE EPITAXY;

SILICON CARBIDE;

EID: 0031547655     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00884-1     Document Type: Article

References (10)

1. T. Sugii, in Advanced Silicon and Semiconducting Silicon-Alloy Based Materials and Devices, ed. J.F.A. Nijs (Institute of Physics Publishing, London, 1994) p. 283.
2. C.J. McHargue and J.M. Williams, Nucl. Instr. and Meth. B 80/81 (1993) 889.
3. H.G. Bohn, J.M. Williams, C.J. McHargue and G.M. Begun, J. Mater. Res. 2 (1987) 107.
4. W. Wesch, A. Heft, J. Heindl, H.P. Strunk, T. Bachmann, E. Glaser and E. Wendler, Nucl. Instr. and Meth. B 106 (1995) 339.
5. R. Kögler, V. Heera, W. Skorupa and M. Voelskow, Proc. of the 9th Int, Conf. Ion Beam Modification of Materials, eds. J.S. Williams, R.G. Elliman and M.C. Ridgway (Elsevier, 1996) p. 912.
6. V. Heera, J. Stoemenos, R. Kögler and W. Skorupa, J. Appl. Phys. 77 (1995) 2999.
7. T. Motooka, Y. Hiroyama, R. Suzuki, T. Ohdaira, Y. Hirano and F. Sato, Jpn. J. Appl. Phys. 34 (1995) L149.
8. T. Motooka, Y. Hiroyama, R. Suzuki, T. Ohdaira, Y. Hirano and F. Sato, Nucl. Instr. and Meth. B 106 (1995) 198.
9. V. Heera, R. Kögler and W. Skorupa, Appl. Phys. Lett. 67 (1995) 1999.
10. S. Harada, M. Ishimaru, T. Motooka, T. Nakata, T. Yoneda and M. Inoue, Appl. Phys. Lett. 69 (1996) 3534.