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Volumn 77, Issue 20, 2000, Pages 3188-3190

Diffusion of boron in silicon carbide: Evidence for the kick-out mechanism

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001213346     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1325390     Document Type: Article
Times cited : (58)

References (17)
  • 14
    • 85037517783 scopus 로고    scopus 로고
    • note
    • BSi, although the maximum concentration actually does not represent an equilibrium concentration but rather a reference concentration used to normalize the concentrations of the PDE system.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.