TEM studies of the defects introduced by ion implantation in SiC

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 147, Issue 1-4, 1999, Pages 62-67

  Grisolia, J ^a   De Mauduit, B ^a   Gimbert, J ^b   Billon, Th ^b   Ben Assayag, G ^a   Bourgerette, C ^a   Claverie, A ^a  

^a CEMES CNRS   (France)

^b CEA LETI   (France)

Author keywords

Electron microscopy; Extended defects; Ion implantation; Semi conductor doping

Indexed keywords

ANNEALING; COMPUTER SIMULATION; MONTE CARLO METHODS; POINT DEFECTS; SEMICONDUCTOR DOPING; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

CLUSTERING; DOPANT ACTIVATION; EXTENDED DEFECTS; POINT DEFECT ANNIHILATION;

ION IMPLANTATION;

EID: 0032741311     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00572-2     Document Type: Article

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