Fullband quantization analysis reveals a third valley in (001) silicon inversion layers

IEEE Electron Device Letters

Volumn 26, Issue 6, 2005, Pages 413-415

  Esseni, David ^a   Palestri, Pierpaolo ^a  

^a UNIVERSITY OF UDINE   (Italy)

Author keywords

Effective mass approximation; MOSFETs; Quantization models; Silicon inversion layers; Two dimensional (2 D) density of states (DOS)

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; COMPUTER SIMULATION; CRYSTAL STRUCTURE; MATHEMATICAL MODELS; SEMICONDUCTING SILICON; TWO DIMENSIONAL;

DENSITY OF STATES (DOS); EFFECTIVE MASS APPROXIMATION; FULLBAND QUANTIZATION ANALYSIS; QUANTIZATION MODELS; SILICON INVERSION LAYERS;

MOSFET DEVICES;

EID: 20544450820     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.848126     Document Type: Article

References (10)

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