Modeling the uniform transport in thin film SOI MOSFETs with a Monte-Carlo simulator for the 2D electron gas

Solid-State Electronics

Volumn 49, Issue 9 SPEC. ISS., 2005, Pages 1529-1535

  Lucci, Luca ^a   Palestri, Pierpaolo ^a   Esseni, David ^a   Selmi, Luca ^a  

^a UNIVERSITY OF UDINE   (Italy)

Author keywords

Mobility modeling; Monte Carlo method; Scattering mechanisms; Silicon on insulator (SOI); Ultra thin silicon thicknesses

Indexed keywords

ELECTRON GAS; HEATING; MONTE CARLO METHODS; MOSFET DEVICES; QUANTUM THEORY; THIN FILMS; TRANSPORT PROPERTIES; VELOCITY MEASUREMENT;

MOBILITY MODELING; SCATTERING MECHANISMS; SILICON-ON-INSULATOR; ULTRA-THIN SILICON THICKNESS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 25844479837     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.07.018     Document Type: Conference Paper

References (22)

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