Self-limiting deposition of aluminum oxide thin films by pulsed plasma-enhanced chemical vapor deposition

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 26, Issue 4, 2008, Pages 1079-1084

  Szymanski, Scott F ^a   Rowlette, Pieter ^a   Wolden, Colin A ^a  

^a Department of Geology and Geological Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

(I ,J) CONDITIONS; ALUMI NUM OXIDE; ALUMINUM OXIDE THIN FILMS; CHAMBER WALL TEMPERATURE; DETECTION LIMIT (DL); DIGITAL CONTROLS; FILM CHARACTERIZATIONS; FOURIER TRANSFORM INFRARED SPECTROSCOPY (MIT FTIR); GAS PHASE ANALYSIS (GPA); HYDROXYL GROUPS; LARGE RANGE; LOW TEMPERATURE (LTR); PULSED PLASMAS; SUBSTRATE TEMPERATURE (ST); TRIMETHYLALUMINUM (TMAI);

ALUMINUM; ALUMINUM METALLOGRAPHY; DEPOSITION RATES; DEPOSITS; DIGITAL CONTROL SYSTEMS; FILM THICKNESS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; INFRARED SPECTROSCOPY; LIGHT METALS; METALLIZING; MOLECULAR BEAM EPITAXY; OXIDE FILMS; OZONE WATER TREATMENT; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; RATE CONSTANTS; REACTION RATES; SOLIDS; SPECTROSCOPIC ELLIPSOMETRY; THERMOANALYSIS; THICK FILMS; THIN FILMS; VAPORS; WALLS (STRUCTURAL PARTITIONS);

VAPOR DEPOSITION;

EID: 46449132567     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2891258     Document Type: Article

References (40)

1. O. Kyrylov, R. Cremer, and D. Neuschutz, Surf. Coat. Technol. 163, 203 (2003).
2. A. N. Gleizes, C. Vahlas, M. M. Sovar, D. Saḿlor, and M. C. Lafont, Chem. Vap. Deposition 13, 23 (2007).
3. T. M. Klein, D. Niu, W. S. Epling, W. Li, D. M. Maher, C. C. Hobbs, R. I. Hegde, I. J. R. Baumvol, and G. N. Parsons, Appl. Phys. Lett. 75, 4001 (1999).
4. E. P. Gusev, M. Copel, E. Cartier, I. J. R. Baumvol, C. Krug, and M. A. Gribelyuk, Appl. Phys. Lett. 76, 176 (2000).
5. P. F. Carcia, R. S. McLean, M. H. Reilly, M. D. Groner, and S. M. George, Appl. Phys. Lett. 89, 031915 (2006).
6. E. Langereis, M. Creatore, S. B. S. Heil, M. C. M. van de Sanden, and W. M. M. Kessels, Appl. Phys. Lett. 89, 021915 (2006).
7. A. R. Chowdhuri, C. G. Takoudis, R. F. Klie, and N. D. Browning, Appl. Phys. Lett. 80, 4241 (2002).
8. P. Tristant, Z. Ding, Q. B. Trang Vinh, H. Hidalgo, J. L. Jauberteau, J. Desmaison, and C. Dong, Thin Solid Films 390, 51 (2001).
9. R. S. Johnson, G. Lucovsky, and I. Baumvol, J. Vac. Sci. Technol. A 19, 1353 (2001).
10. J. W. Elam, M. D. Groner, and S. M. George, Rev. Sci. Instrum. 73, 2981 (2002).
11. R. L. Puurunen, J. Appl. Phys. 97, 121301 (2005).
12. S. B. S. Heil, P. Kudlacek, E. Langereis, R. Engeln, M. C. M. van de Sanden, and W. M. M. Kessels, Appl. Phys. Lett. 89, 131505 (2006).
13. M. Seman, J. J. Robbins, S. Agarwal, and C. A. Wolden, Appl. Phys. Lett. 90, 131504 (2007).
14. S. F. Szymanski, M. T. Seman, and C. A. Wolden, Surf. Coat. Technol. 201, 8991 (2007).
15. S. J. Yun, K.-H. Lee, J. Skarp, H.-R. Kim, and K. S. Nam, J. Vac. Sci. Technol. A 15, 2993 (1997).
16. R. Katamreddy, R. Inman, G. Jursich, A. Soulet, and C. Takoudis, J. Electrochem. Soc. 153, C701 (2006).
17. K. Kukli, M. Ritala, M. Leskelä, and J. Jokinen, J. Vac. Sci. Technol. A 15, 2214 (1997).
18. A. W. Ott, J. W. Klaus, J. M. Johnson, and S. M. George, Thin Solid Films 292, 135 (1997).
19. M. D. Groner, F. H. Fabreguette, J. W. Elam, and S. M. George, Chem. Mater. 16, 639 (2004).
20. J. B. Kim, D. R. Kwon, K. Chakrabati, C. Lee, K. Y. Oh, and J. H. Lee, J. Appl. Phys. 92, 6739 (2005).
21. S. D. Elliott, G. Scarel, C. Wiemer, M. Fanciulli, and G. Pavia, Chem. Mater. 18, 3764 (2006).
22. S. K. Kim and C. H. Hwang, J. Appl. Phys. 96, 2323 (2004).
23. A. Niskanen, K. Aristala, M. Ritala, and M. Leskela, J. Electrochem. Soc. 152, F90 (2005).
24. J. W. Lim and S. J. Yun, Electrochem. Solid-State Lett. 7, F45 (2004).
25. S.-C. Ha, E. Choi, S.-H. Kim, and J. S. Roh, Thin Solid Films 476, 252 (2005).
26. J. L. van Hemmen, S. B. S. Heil, J. H. Klootwijk, F. Roozeboom, C. J. Hodson, M. C. M. van de Sanden, and W. M. M. Kessels, J. Electrochem. Soc. 154, G165 (2007).
27. A. Sonnenfeld, R. Hauert, and P. R. von Rohr, Plasma Chem. Plasma Process. 26, 319 (2006).
28. J. J. Robbins, J. Esteban, C. Fry, and C. A. Wolden, J. Electrochem. Soc. 150, C693 (2003).
29. C. A. Wolden, Plasma Chem. Plasma Process. 25, 169 (2005).
30. S. F. Szymanski, M. T. Seman, and C. A. Wolden, J. Vac. Sci. Technol. A 25, 1493 (2007).
31. S. D. Hersee and J. M. Ballingall, J. Vac. Sci. Technol. A 8, 800 (1990).
32. A. W. Laubengayer and W. F. Gilliam, J. Am. Chem. Soc. 63, 477 (1941).
33. K. J. Hubbard and D. G. Schlom, J. Mater. Res. 11, 2757 (1996).
34. W. R. Salaneck, R. Bergman, J.-E. Sundgren, A. Rockett, Y. T. Motooka, and J. E. Greene, Surf. Sci. 198, 461 (1988).
35. C. Morterra and G. Magnacca, Catal. Today 27, 497 (1996).
36. S.-L. Lin and C.-S. Hwang, J. Non-Cryst. Solids 202, 61 (1996).
37. H. Szymanowski, O. Zabeida, J. E. Klemberg-Sapieha, and L. Martinu, J. Vac. Sci. Technol. A 23, 241 (2005).
38. B.-O. Cho, S. X. Lao, and J. P. Chang, J. Appl. Phys. 93, 9345 (2003).
39. G. Busca and V. Lorenzelli, Mater. Chem. 7, 89 (1982).
40. C. R. Otterman, K. Bange, W. Wagner, M. Laube, and F. Rauch, Surf. Interface Anal. 19, 435 (1992).