Microwave plasma enhanced CVD of aluminum oxide films: OES diagnostics and influence of the RF bias

Thin Solid Films

Volumn 390, Issue 1-2, 2001, Pages 51-58

  Tristant, P ^a   Ding, Z ^b   Trang Vinh, Q B ^a   Hidalgo, H ^a   Jauberteau, J L ^a   Desmaison, J ^a   Dong, C ^b  

^a UNIVERSITY OF LIMOGES   (France)

^b DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Alumina; OES; PECVD; Trimethylaluminum

Indexed keywords

ALUMINA; ARGON; EMISSION SPECTROSCOPY; MICROWAVES; PLASMA DIAGNOSTICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON WAFERS; SURFACE TREATMENT;

TRIMETHYLALUMINUM;

OPTICAL FILMS;

EID: 0035973378     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)00924-5     Document Type: Article

References (15)