Properties of high-k/ultrahigh purity silicon nitride stacks

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 4, 2004, Pages 1146-1151

  Shi, X ^a   Shriver, M ^a   Zhang, Z ^a   Higman, T ^a   Campbell, S A ^a  

^a University of Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYERS; CHARGE DENSITY; RAPID THERMAL NITRIDATION (RTN); ULTRAHIGH PURITY (UHP);

AUGER ELECTRON SPECTROSCOPY; CAPACITANCE; CAPACITORS; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; CONTAMINATION; ELECTRIC POTENTIAL; ELECTRON TUNNELING; FIELD EFFECT TRANSISTORS; MOS DEVICES; MOSFET DEVICES; PERMITTIVITY; SECONDARY ION MASS SPECTROMETRY; THERMAL CONDUCTIVITY; ULTRAHIGH VACUUM;

SILICON NITRIDE;

EID: 4344649991     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1759355     Document Type: Article

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