Highly reliable 2.5 nm Ta2O5 capacitor process technology for 256 Mbit DRAMs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1991-January, Issue , 1991, Pages 827-830

  Kamiyama, Satoshi ^a   Saeki, Takanori ^a   Mori, Hidemitu ^a   Numasawa, Youichirou ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Atomic measurements; Capacitors; Dielectric films; Electrodes; Random access memory; Scanning electron microscopy; Surface treatment; Temperature; Testing; Tin

Indexed keywords

DIELECTRIC FILMS; DIELECTRIC MATERIALS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRODES; ELECTROLYTIC CAPACITORS; ELECTRON DEVICES; RANDOM ACCESS STORAGE; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SCANNING ELECTRON MICROSCOPY; SURFACE TREATMENT; TANTALUM OXIDES; TEMPERATURE; TESTING; TIN; TIN PLATE;

ATOMIC MEASUREMENTS; OPERATING CONDITION; PLATE ELECTRODES; PROCESS TECHNOLOGIES; RANDOM ACCESS MEMORY; RAPID THERMAL NITRIDATION; TIME DEPENDENT DIELECTRIC BREAKDOWN;

CAPACITORS;

EID: 84954191552     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1991.235297     Document Type: Conference Paper

References (0)