Ta2O5 capacitors for 1 Gbit DRAM and beyond

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 835-838

  Kwon, K W ^a   Park, I S ^a   Han, D H ^a   Kim, E S ^a   Ahn, S T ^a   Lee, M Y ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; ELECTRODES; LEAKAGE CURRENTS; SEMICONDUCTING SILICON; SPUTTERING; TANTALUM COMPOUNDS; THERMODYNAMIC STABILITY; TITANIUM NITRIDE;

DYNAMIC RANDOM ACCESS MEMORY (DRAM); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD); TANTALUM OXIDE CAPACITOR;

RANDOM ACCESS STORAGE;

EID: 0028744681     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)