High quality ultra-thin TiO2/Si3N4 gate dielectric for giga scale MOS technology

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 377-380

  Guo, Xin ^a   Ma, T P ^a   Tamagawa, T ^a   Halpern, B L ^a  

^a YALE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; GATES (TRANSISTOR); INTERFACES (MATERIALS); LEAKAGE CURRENTS; SILICON NITRIDE; TITANIUM DIOXIDE; ULTRATHIN FILMS; VAPOR DEPOSITION;

GATE DIELECTRICS; JET VAPOR DEPOSITION (JVD);

MOSFET DEVICES;

EID: 0032256248     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)