A high-C capacitor (20.4 fF/ mu m2) with ultrathin CVD-Ta2O5 films deposited on rugged poly-Si for high density DRAMs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1992-December, Issue , 1992, Pages 263-266

  Fazan, P C ^a   Mathews, V K ^a   Sandler, N ^b   Lo, G Q ^c   Kwong, D L ^c  

^a MICRON TECHNOLOGY INC   (United States)

^b LAM RESEARCH CORPORATION   (United States)

^c UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRODES; ELECTRON DEVICES; HIGH-K DIELECTRIC; POLYCRYSTALLINE MATERIALS; TANTALUM OXIDES; ULTRATHIN FILMS;

CHEMICAL VAPOR DEPOSITED; HEMISPHERICAL GRAINS; HIGH DIELECTRIC CONSTANT MATERIALS; SILICON ELECTRODE; STACKED DYNAMIC RANDOM ACCESS MEMORY; STACKED STRUCTURE; STORAGE CAPACITOR; ULTRA-HIGH;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 84987380386     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307356     Document Type: Conference Paper

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