Low-temperature integrated process below 500 °C for thin Ta2O5 capacitor for giga-bit DRAMs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 839-842

  Takaishi, Y ^a   Sakao, M ^a   Kamiyama, S ^a   Suzuki, H ^a   Watanabe, H ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; LEAKAGE CURRENTS; LOW TEMPERATURE OPERATIONS; TANTALUM COMPOUNDS; THERMODYNAMIC STABILITY; THIN FILMS;

DYNAMIC RANDOM ACCESS MEMORY (DRAM); LOW TEMPERATURE INTEGRATED PROCESS; TANTALUM OXIDE CAPACITOR;

RANDOM ACCESS STORAGE;

EID: 0028735530     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)