A unified quantum correction model for nanoscale single- And double-gate MOSFETs under inversion conditions

Nanotechnology

Volumn 15, Issue 8, 2004, Pages 1009-1016

  Li, Yiming ^a,b   Yu, Shao Ming ^b  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC CHARGE; ELECTRIC FIELDS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; OPTIMIZATION; QUANTUM THEORY; SILICON;

DEVICE SIMULATORS; INVERSION CONDITIONS; MOS STRUCTURES; QUANTUM CORRECTION MODELS;

MOSFET DEVICES;

EID: 4344631051     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/15/8/026     Document Type: Article

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