Investigation of gate-induced drain leakage (GIDL) current in thin body devices: Single-gate ultra-thin body, symmetrical double-gate, and asymmetrical double-gate MOSFETs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 2073-2076

  Choi, Yang Kyu ^a   Ha, Daewon ^a   King, Tsu Jae ^a   Bokor, Jeffrey ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Asymmetrical double gate; FinFET; Gate induced drain leakage (GIDL); Silicon on insulator (SOI); Symmetrical double gate; Ultra thin body

Indexed keywords

APPROXIMATION THEORY; CURRENT DENSITY; ELECTRIC FIELD EFFECTS; ENERGY GAP; GATES (TRANSISTOR); LEAKAGE CURRENTS; MATHEMATICAL MODELS; PHONONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; SURFACES;

ASYMMETRICAL DOUBLE GATE MOSFET; GATE INDUCED DRAIN LEAKAGE CURRENT; SINGLE GATE ULTRA THIN BODY MOSFET; SYMMETRICAL DOUBLE GATE MOSFET;

MOSFET DEVICES;

EID: 0038009941     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.2073     Document Type: Article

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