A genetic algorithm approach to InGaP/GaAs HBT parameter extraction and RF characterization

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 2371-2374

  Li, Yiming ^a,b   Cho, Yen Yu ^b   Wang, Chuan Sheng ^c   Huang, Kuen Yu ^b  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Genetic algorithm; HBT; Parameter extraction technique; RF; Two tone characteristics

Indexed keywords

COMPUTER SIMULATION; FAST FOURIER TRANSFORMS; GENETIC ALGORITHMS; ITERATIVE METHODS; MATHEMATICAL MODELS; NONLINEAR EQUATIONS; OPTIMIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

INDIUM GALLIUM PHOSPHIDE; MONOTONE ITERATIVE METHOD; PARAMETER EXTRACTION TECHNIQUE; TWO-TONE CHARACTERISTICS; WAVEFORM RELAXATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0038686207     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.2371     Document Type: Article

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