Device modeling and simulations toward sub-10 nm semiconductor devices

IEEE Transactions on Nanotechnology

Volumn 1, Issue 1, 2002, Pages 63-71

  Sano, Nobuyuki ^b   Hiroki, Akira ^a,c,e,f   Matsuzawa, Kazuya ^d  

^a IEEE

^b UNIVERSITY OF TSUKUBA   (Japan)

^c SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER   (Japan)

^d TOSHIBA CORPORATION   (Japan)

^e Institute of Electronics and Communication Engineers ot Japan (IECEJ)   (Japan)

^f JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

Author keywords

Device simulation; Drift diffusion; Long range Coulomb potential; Many body effects; Monte carlo; Quantum effects; Quantum potential; Sub 10 nm metal oxide semiconductor field effect transistors (MOSFETs)

Indexed keywords

DEVICE SIMULATIONS; DRIFT-DIFFUSION; LONG-RANGE COULOMB POTENTIAL; MANY-BODY EFFECTS; QUANTUM EFFECTS; QUANTUM POTENTIAL;

COMPUTER SIMULATION; MONTE CARLO METHODS; MOSFET DEVICES; NUMERICAL ANALYSIS; QUANTUM THEORY;

SEMICONDUCTOR DEVICES;

EID: 3042753085     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2002.1005427     Document Type: Article

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