Solution of 1-D Schrodinger and poisson equations in single and double gate SOI MOS

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 1997, Pages 93-96

  Fiegna, Claudio ^a   Abramo, Antonio ^a  

^a UNIVERSITY OF FERRARA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; GATES (TRANSISTOR); OXIDES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY;

GATE TO CHANNEL CAPACITANCE; POISSON EQUATIONS; SCHRODINGER EQUATIONS; SHORT CHANNEL EFFECTS;

MOS DEVICES;

EID: 0030688131     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)