Modeling of quantum effects for ultrathin oxide MOS structures with an effective potential

IEEE Transactions on Nanotechnology

Volumn 1, Issue 4, 2002, Pages 238-242

  Li, Yiming ^{a,b,c,f,g,h,i}   Tang, Ting Wei ^a,d   Wang, Xinlin ^e,j  

^a IEEE   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d University of Massachusetts   (United States)

^e IBM   (United States)

^f NCTU ^*  (Greece)

^g Institute of Electronic Information and Communication Engineers   (Japan)

^h AMERICAN PHYSICAL SOCIETY   (United States)

ⁱ Society for Industrial and Applied Mathematics   (Taiwan)

^j IBM RESEARCH   (United States)

more..

Author keywords

Effective potential; Modeling and simulation; MOS devices; Quantum effect; Schr dinger Poisson

Indexed keywords

EFFECTIVE POTENTIAL; MODELING AND SIMULATION; QUANTUM EFFECT; SCHRÖDINGER-POISSON;

CAPACITANCE; COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC POTENTIAL; MOS DEVICES; ULTRATHIN FILMS;

QUANTUM THEORY;

EID: 1542335264     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2002.807386     Document Type: Conference Paper

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