Comparison of Three Quantum Correction Models for the Charge Density in MOS Inversion Layers

Journal of Computational Electronics

Volumn 1, Issue 1-2, 2002, Pages 283-287

  Wang, Xinlin ^a   Tang, Ting wei ^a  

^a University of Massachusetts   (United States)

Author keywords

charge distribution; density gradient theory; modified local density approximation; quantum mechanical effect

Indexed keywords

CHARGE DISTRIBUTION; INVERSION LAYERS; LOCAL DENSITY APPROXIMATION; QUANTUM THEORY; SEMICONDUCTOR DOPING; SOLS;

DENSITY GRADIENT THEORIES; DENSITY GRADIENTS; GATE OXIDE THICKNESS; HIGH-DENSITY INTEGRATION; QUANTUM CORRECTION MODELS; QUANTUM MECHANICAL EFFECTS; SEMICONDUCTOR-INSULATOR INTERFACE; SOLID STATE ELECTRONICS;

MOS DEVICES;

EID: 3042855368     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1023/A:1020706414966     Document Type: Article

References (8)

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