The remote roughness mobility resulting from the ultrathin SiO2 thickness nonuniformity in the DG SOI and bulk MOS transistors

Microelectronic Engineering

Volumn 59, Issue 1-4, 2001, Pages 417-421

  Walczak, Jakub ^a   Majkusiak, Bogdan ^a  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Double gate SOI transistor; Electron mobility; Remote roughness; Ultrathin silicon oxide

Indexed keywords

APPROXIMATION THEORY; DIELECTRIC FILMS; ELECTRON MOBILITY; GATES (TRANSISTOR); MATHEMATICAL MODELS; POISSON EQUATION; SILICA; SILICON ON INSULATOR TECHNOLOGY; ULTRATHIN FILMS; WAVE EQUATIONS;

DOUBLE GATE TRANSISTORS;

MOSFET DEVICES;

EID: 0035498621     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00633-5     Document Type: Conference Paper

References (9)