Comparison of short-channel effect and offstate leakage in symmetric vs. asymmetric double gate MOSFETs

IEEE International SOI Conference

Volumn , Issue , 2000, Pages 120-121

  Tang, Stephen H ^a   Xuan, Peiqi ^a   Bokor, Jeffrey ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; DOPING (ADDITIVES); LEAKAGE CURRENTS; THRESHOLD VOLTAGE;

OFFSTATE LEAKAGES; POTENTIAL BARRIERS;

MOSFET DEVICES;

EID: 0034472541     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)