Mechanical and microstructural characterization of high aspect ratio through-wafer electroplated copper interconnects

Journal of Micromechanics and Microengineering

Volumn 17, Issue 9, 2007, Pages 1749-1757

  Dixit, Pradeep ^a   Xu, Luhua ^a   Miao, Jianmin ^a   Pang, John H L ^a   Preisser, Robert ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b ATOTECH DEUTSCHLAND GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; DIFFRACTION; ELECTROCHEMISTRY; ELECTROPLATING; GRAIN SIZE AND SHAPE; HARDNESS; MECHANICAL PROPERTIES; MICROSTRUCTURE; OPTICAL INTERCONNECTS; PHOTORESISTS; PRESSURE DROP; REACTIVE ION ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; THERMAL EXPANSION; THERMAL SPRAYING; X RAY ANALYSIS; X RAY DIFFRACTION;

ELECTROPLATED COPPER;

COPPER;

EID: 42549126137     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/17/9/001     Document Type: Conference Paper

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