Through-wafer electroplated copper interconnect with ultrafine grains and high density of nanotwins

Applied Physics Letters

Volumn 90, Issue 3, 2007, Pages

  Xu, Luhua ^a   Dixit, Pradeep ^a   Miao, Jianmin ^a   Pang, John H L ^a   Zhang, Xi ^b   Tu, K N ^b   Preisser, Robert ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c ATOTECH DEUTSCHLAND GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER INTERCONNECTS; NANOTWINS; PURE COPPER;

ASPECT RATIO; ELECTRIC CONDUCTIVITY; ELECTROPLATING; GRAIN GROWTH; NANOSTRUCTURED MATERIALS; TRANSMISSION ELECTRON MICROSCOPY;

LARGE SCALE SYSTEMS;

EID: 33846410639     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2432284     Document Type: Article

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